Study of dry etching process using SF6 and CF4/O2 for Nb/NbxSi1−x/Nb Josephson-junction fabrication

• Published in: 2012 Conference on Precision electromagnetic Measurements pp. 46 - 47
• Main Authors: Qing Zhong, Wenhui Cao, Jinjin Li, Yuan Zhong, Xueshen Wang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.07.2012
• Subjects: CF 4; dry etch; Etching; ICP; Josephson junctions; Junctions; NbSi; Niobium; RIE; SF 6; SNS; Sulfur hexafluoride

Both SF 6 and CF 4 are plasma chemistries that are often used during dry etching in fabricating the niobium Josephson junctions. This paper presents the preliminary experimental results of using these two etches on etching Nb/Nb x Si 1-x /Nb Josephson junctions in NIM.