0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs

• Published in: 2012 24th International Symposium on Power Semiconductor Devices and ICs pp. 401 - 404
• Main Authors: Chou, Hsueh-Liang, Su, P. C., Ng, J. C. W., Wang, P. L., Lu, H. T., Lee, C. J., Syue, W. J., Yang, S. Y., Tseng, Y. C., Cheng, C. C., Yao, C. W., Liou, R. S., Jong, Y. C., Tsai, J. L., Cai, Jun, Tuan, H. C., Huang, Chih-Fang, Gong, Jeng
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2012
• Subjects: Breakdown voltage; Human computer interaction; Performance evaluation; Robustness; Semiconductor optical amplifiers; Substrates; USA Councils
• ISBN: 9781457715945; 1457715945
• ISSN: 1063-6854; 1946-0201
• DOI: 10.1109/ISPSD.2012.6229106

This paper presents a single BCD technology platform with high performance power devices at a wide range of operating voltages. The platform offers 6 V to 70 V LDMOS devices. All devices offer best-in-class specific on-resistance of 20 to 40 % lower than that of the state-of-the-art IC-based LDMOS devices and robustness better than the square SOA (safe-operating-area). Fully isolated LDMOS devices, in which independent bias is capable for circuit flexibility, demonstrate superior specific on-resistance (e.g. 11.9 mΩ-mm 2 for breakdown voltage of 39 V). Moreover, the unusual sudden current enhancement appeared in the I D -V D saturation region of most of the high voltage LDMOS devices is significantly suppressed.