High speed replication of sub-micron features on large areas by X-ray lithography

We have developed, and describe herein, a new approach to X-ray lithography based on the use of X-rays with wavelengths of 4-6 Å rather than the 8-34 Å wavelength used in previous work. The principal advantage of the shorter wavelengths is that they allow the exposure system to have X-ray windows...

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Bibliographic Details
Published in1974 International Electron Devices Meeting (IEDM) pp. 18 - 20
Main Authors Maydan, D., Coquin, G. A., Maldonado, J. R., Somekh, S., Lou, D. Y., Taylor, G. N.
Format Conference Proceeding
LanguageEnglish
Published IRE 01.12.1974
Subjects
Gold
Optical attenuators
Particle beam optics
Resists
Silicon
Substrates
X-ray lithography
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Summary:We have developed, and describe herein, a new approach to X-ray lithography based on the use of X-rays with wavelengths of 4-6 Å rather than the 8-34 Å wavelength used in previous work. The principal advantage of the shorter wavelengths is that they allow the exposure system to have X-ray windows for increased throughput. We have achieved the replication of submicron size features in metal films using a 4.6 Å Rh L α source, a new X-ray mask and new X-ray resist with high sensitivity to the shorter wavelengths and improved ion milling techniques.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1974.6219622