In situ and ex situ characterization of (Ag, Cu)InSe2 thin films

In situ and ex situ characterization methods have been used in order to investigate the growth as well as the physical and chemical properties of (Ag, Cu)InSe 2 (AgCIS) thin films deposited by direct current (dc) magnetron sputtering. Data acquired by real time spectroscopic ellipsometry (RTSE) were...

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Published in2011 37th IEEE Photovoltaic Specialists Conference pp. 000326 - 000328
Main Authors Begou, T., Little, S. A., Aquino, A., Ranjan, V., Rockett, A., Collins, R. W., Marsillac, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2011
Subjects
Copper
Data mining
Dielectrics
Grain size
Photonic band gap
Surface roughness
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Summary:In situ and ex situ characterization methods have been used in order to investigate the growth as well as the physical and chemical properties of (Ag, Cu)InSe 2 (AgCIS) thin films deposited by direct current (dc) magnetron sputtering. Data acquired by real time spectroscopic ellipsometry (RTSE) were used to extract growth parameters such as thickness and surface roughness. A study of the growth parameters revealed that the layers demonstrated Volmer-Weber growth behavior. The complex dielectric functions, (ϵ 1 ϵ 2 ), of AgCIS at high and room temperatures as a function of x = Cu/(Ag+Cu) were also extracted from the RTSE data. The band gaps were extracted from the RTSE dielectric functions and compared with ex situ measurements.
ISBN:9781424499663
1424499666
ISSN:0160-8371
DOI:10.1109/PVSC.2011.6185920