Fabrication and characteristics of scaled SONOSFET nonvolatile memory devices for full-featured EEPROMs

Scaled SONOSFET nonvolatile memory devices were designed and fabricated using the n-well CMOS process technology with 1.5 /spl mu/m design rule in order to investigate the characteristics of scale-down devices. The ONO gate insulator of fabricated SONOSFETs were formed with a 18 /spl Aring/ tunnelin...

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Bibliographic Details
Published inProceedings of 5th International Conference on Properties and Applications of Dielectric Materials Vol. 2; pp. 937 - 939 vol.2
Main Authors Seon-Ju Kim, Joo-Yeon Kim, Sang-Bae Yi, Sung-Bae Lee, Kwang-Yell Seo
Format Conference Proceeding
LanguageEnglish
Published IEEE 1997
Subjects
CMOS process
CMOS technology
Electric variables
EPROM
Fabrication
MONOS devices
Nonvolatile memory
Oxidation
SONOS devices
Tunneling
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Summary:Scaled SONOSFET nonvolatile memory devices were designed and fabricated using the n-well CMOS process technology with 1.5 /spl mu/m design rule in order to investigate the characteristics of scale-down devices. The ONO gate insulator of fabricated SONOSFETs were formed with a 18 /spl Aring/ tunneling oxide, 38 /spl Aring/ nitride and 37 /spl Aring/ blocking oxide. Memory window of 1.9 V was obtained with write pulse of +7 V, 2 sec and erase pulse of -7 V, 2 sec, and 1 V with /spl plusmn/7 V, 50 msec. Data retention after programming was achieved over 10 years.
ISBN:0780326512
9780780326514
DOI:10.1109/ICPADM.1997.616594