Characterization and resistive switching properties of solution-processed HfO2, HfSiO4, and ZrSiO4 thin films on rigid and flexible substrates

Memristors, nonvolatile bipolar resistive switching devices first intentionally fabricated in 2008 [1], have attracted attention for use in a wide range of applications. To date, most memristors have been fabricated from TiO x [1] or TaO x [2]. However, it is necessary to explore the memristive prop...

Full description

Saved in:
Bibliographic Details
Published in2011 International Semiconductor Device Research Symposium (ISDRS) pp. 1 - 2
Main Authors Tedesco, J. L., Zheng, W., Kirillov, O. A., Pookpanratana, S., Jang, H., Kavuri, P. P., Nguyen, N. V., Richter, C. A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2011
Subjects
Memristors
Optical device fabrication
Optical films
Optical imaging
Optical switches
Substrates
Online AccessGet full text

Cover

More Information
Summary:Memristors, nonvolatile bipolar resistive switching devices first intentionally fabricated in 2008 [1], have attracted attention for use in a wide range of applications. To date, most memristors have been fabricated from TiO x [1] or TaO x [2]. However, it is necessary to explore the memristive properties of other dielectric materials, because these dielectrics may have advantageous properties that have not yet been explored.
ISBN:9781457717550
1457717557
DOI:10.1109/ISDRS.2011.6135416