Observations of low frequency admittance between isolated GaAs structures formed by ion implantation and by epitaxy on epitaxial buffer layers prepared at high and low temperatures

Comparisons have been made of the frequency dependence of the backgate admittance of GaAs structures prepared by MBE on undoped buffer layers prepared at high and low temperatures and of ion implanted structures. A model is offered to explain extra capacitive currents at low frequencies. Inductive a...

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Bibliographic Details
Published inProceedings of Semiconducting and Semi-Insulating Materials Conference pp. 51 - 54
Main Authors Boroumand, F.A., Khalid, A.H., Hopkinson, M., Swanson, J.G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Admittance
Annealing
Buffer layers
Frequency dependence
Gallium arsenide
Ion implantation
MESFETs
Molecular beam epitaxial growth
Temperature dependence
Testing
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Summary:Comparisons have been made of the frequency dependence of the backgate admittance of GaAs structures prepared by MBE on undoped buffer layers prepared at high and low temperatures and of ion implanted structures. A model is offered to explain extra capacitive currents at low frequencies. Inductive and negative resistance behaviours which appear to be related have not been explained. None of these phenomena were apparent in the LT based structures.
ISBN:0780331796
9780780331792
DOI:10.1109/SIM.1996.570876