Fully differential, 40 Gb/s regulated cascode transimpedance amplifier in 0.13 µm SiGe BiCMOS technology

• Published in: 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) pp. 33 - 36
• Main Authors: Amid, S B, Plett, C, Schvan, P
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.10.2010
• Subjects: Bandwidth; BiCMOS integrated circuits; BiCMOS process technology; CMOS integrated circuits; Current measurement; Gain; Noise; Optical communication network; Optical fiber amplifiers; Regulated Cascode (RGC); Transimpedance Amplifier
• ISBN: 1424485789; 9781424485789
• ISSN: 1088-9299; 2378-590X
• DOI: 10.1109/BIPOL.2010.5667977

A broadband differential Transimpedance amplifier (TIA) has been designed and measured in 0.13μm BiCMOS Technology. Regulated Cascode (RGC) configuration has been employed to reduce the effect of the large parasitic capacitor of the PIN diode. The added C PD , representing PIN diode parasitic capacitor, is 300fF. The TIA has 53.6 dBO differential transimpedance gain and 28GHz measured bandwidth. The total measured integrated input referred noise is 6.11μA rms . The TIA chip including the TIA and 3 stages of buffer consumes 110mW power from a 3V power supply. The active chip area is 330μm×210μm and the total chip area including the pads is 1050μm×530μm.