Experimental results of GaInP/sub 2//GaAs/Ge triple junction cell development for space power systems

This paper describes the successful demonstration of high efficiency, large area monolithic triple-junction, n-on-p, GaInP/sub 2//GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm/spl times/2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell...

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Published inConference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 pp. 183 - 186
Main Authors Chiang, P.K., Ermer, J.H., Nishikawa, W.T., Krut, D.D., Joslin, D.E., Eldredge, J.W., Cavicchi, B.T., Olson, J.M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Electrons
Gallium arsenide
Inductors
Laboratories
Lighting
Power systems
Production
Size measurement
Sun
Temperature
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Summary:This paper describes the successful demonstration of high efficiency, large area monolithic triple-junction, n-on-p, GaInP/sub 2//GaAs/Ge cells. The highest cell efficiency (cell size: 2 cm/spl times/2 cm) measured to date is 25.7%, under 1 sun, AM0 illumination. A very uniform distribution of cell efficiency across a 3" diameter wafer is also achieved. The average efficiency of 164, 2 cm/spl times/2 cm triple junction cells and 52 cell-interconnect-cover (CIC) assemblies are 22.6% and 21.9%, respectively. The results of temperature coefficient, 1 MeV electron irradiation and thermal cycle measurements (for CICs) are also reported.
ISBN:0780331664
9780780331662
ISSN:0160-8371
DOI:10.1109/PVSC.1996.563977