Development of high efficiency p/sup +//n InP solar cells for hetero-epitaxial applications

We have developed high efficiency p/sup +//n/n/sup +/ homoepitaxial InP space solar cells with the intent of applying the technology to hetero-epitaxial InP cell growth on Ge or Si substrates. Our cell design eliminates the use of InGaAs contact layers under the front grid metallization. A p/sup +//...

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Published inConference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 pp. 171 - 174
Main Authors Hoffman, R.W., Fatemi, N.S., Jenkins, P.P., Scheiman, D.A., Ringel, S.A., Davis, W., Weizer, V.G., Wilt, D.M., Brinker, D.J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Aging
Hydrogen
Indium gallium arsenide
Indium phosphide
Metallization
Ohmic contacts
Photovoltaic cells
Space technology
Substrates
Sun
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Summary:We have developed high efficiency p/sup +//n/n/sup +/ homoepitaxial InP space solar cells with the intent of applying the technology to hetero-epitaxial InP cell growth on Ge or Si substrates. Our cell design eliminates the use of InGaAs contact layers under the front grid metallization. A p/sup +//n/n/sup +/ cell demonstrated a conversion efficiency of 16.2% under AM0, 1 sun, 25/spl deg/C conditions. Cell performance instabilities were observed as a function of aging and light soaking. Hydrogen incorporated during cool-down from OMVPE growth temperature may have been responsible for the observed instabilities. Conversion efficiency values exceeding 18% are expected with minor alterations to our cell design.
ISBN:0780331664
9780780331662
ISSN:0160-8371
DOI:10.1109/PVSC.1996.563974