Evidence of successive Fowler-Nordheim and Frenkel-Poole conductions in Si3N4 based RF-MEMS capacitive switches

We studied the dielectric charging in RF-MEMS based on Si 3 N 4 dielectric layers, deposited by PECVD. The component is a 79 fF to 646 fF capacitive switch made with two series fixed and MEMS capacitors. Charging is investigated and modeled in order to extract the specific conduction laws. We used a...

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Published inThe 40th European Microwave Conference pp. 513 - 516
Main Authors Mardivirin, D, Courrèges, S, Crunteanu, A, Pothier, A, Blondy, P, Coccetti, F, Plana, R
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2010
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Summary:We studied the dielectric charging in RF-MEMS based on Si 3 N 4 dielectric layers, deposited by PECVD. The component is a 79 fF to 646 fF capacitive switch made with two series fixed and MEMS capacitors. Charging is investigated and modeled in order to extract the specific conduction laws. We used a two time constants charging model, which can be identified as successive Fowler-Nordheim and Frenkel-Poole conductions occuring in RF-MEMS devices.
ISBN:1424472326
9781424472321
DOI:10.23919/EUMC.2010.5616658