Pushing conventional SiGe HBT technology towards "Dotfive" terahertz

This paper presents an overview of the millimeter-wave dedicated 130 nm SiGe BiCMOS technology used by STMicroelectronics as a starting point for DOTFIVE Project developments, and achievements during the first two years of the Project, which culminate in the demonstration of an intermediate 400 GHz...

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Bibliographic Details
Published inThe 5th European Microwave Integrated Circuits Conference pp. 21 - 24
Main Authors Chantre, Alain, Chevalier, Pascal, Lacave, Thomas, Avenier, Gregory, Buczko, Michel, Campidelli, Yves, Depoyan, Linda, Berthier, Ludovic, Gacquière, Christophe
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2010
Subjects
BiCMOS integrated circuits
Doping
Heterojunction bipolar transistors
Heterojunction bipolar transistors (HBT)
Layout
Nanotechnology
Silicon
Silicon germanium
Silicon Germanium (SiGe)
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Summary:This paper presents an overview of the millimeter-wave dedicated 130 nm SiGe BiCMOS technology used by STMicroelectronics as a starting point for DOTFIVE Project developments, and achievements during the first two years of the Project, which culminate in the demonstration of an intermediate 400 GHz f MAX SiGe HBT process, with good device control and reproducibility.
ISBN:9781424472314
1424472318