Control of electro-chemical etching for uniform 0.1 /spl mu/m gate formation of HEMT

In gate recess etching of a 0.1 /spl mu/m gate HEMT process, an anomalous phenomenon caused by electrochemical etching was found. The isolation region implanted with oxygen ion was etched more deeply than the channel region, which caused a non-flat etched surface. This anomaly affects device perform...

Full description

Saved in:
Bibliographic Details
Published inInternational Electron Devices Meeting. Technical Digest pp. 47 - 50
Main Authors Nitta, Y., Ohshima, T., Shigemasa, R., Nishi, S., Kimura, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Chemicals
Circuits
Electrodes
Etching
FETs
Gallium arsenide
HEMTs
Monitoring
Threshold voltage
Transconductance
Online AccessGet full text

Cover

More Information
Summary:In gate recess etching of a 0.1 /spl mu/m gate HEMT process, an anomalous phenomenon caused by electrochemical etching was found. The isolation region implanted with oxygen ion was etched more deeply than the channel region, which caused a non-flat etched surface. This anomaly affects device performance and its uniformity seriously. We suppressed the anomaly by optimizing the condition of the isolation and the pattern of the device. A flat etched surface was achieved and uniform device characteristics obtained.
ISBN:0780333934
9780780333932
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1996.553119