Low resistance ohmic contacts to p-Ge/sub 1-x/Cx on Si

We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge/sub 0.9983/C/sub 0.0017/ grown on a

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Bibliographic Details
Published inIEEE electron device letters Vol. 18; no. 1; pp. 7 - 9
Main Authors Xiaoping Shao, Rommel, S.L., Orner, B.A., Berger, P.R., Kolodzey, J., Unruh, K.M.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1997
Subjects
Annealing
Carbon dioxide
Contact resistance
Electrical resistance measurement
Gold
Metallization
Molecular beam epitaxial growth
Ohmic contacts
Substrates
Temperature distribution
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Summary:We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge/sub 0.9983/C/sub 0.0017/ grown on a
ISSN:0741-3106
1558-0563
DOI:10.1109/55.553059