Floating body effects in 0.15 /spl mu/m partially depleted SOI MOSFETs below 1 V

Summary form only. The SOI MOSFET has attracted much attention as a very low power, low voltage device. The supply voltage is reduced to less than 1 V for extreme low power applications. The floating body effects, which is one of the most serious problems in partially depleted (PD) SOI MOSFETs, woul...

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Bibliographic Details
Published in1996 IEEE International SOI Conference Proceedings pp. 70 - 71
Main Authors Saraya, T., Takamiya, M., Duyet, T.N., Tanaka, T., Ishikuro, H., Hiramoto, T., Ikoma, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Current measurement
Electricity supply industry
Impact ionization
Instruments
Low voltage
MOSFETs
Noise level
Photonic band gap
Research and development
Threshold voltage
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Summary:Summary form only. The SOI MOSFET has attracted much attention as a very low power, low voltage device. The supply voltage is reduced to less than 1 V for extreme low power applications. The floating body effects, which is one of the most serious problems in partially depleted (PD) SOI MOSFETs, would be very different when the supply voltage is reduced below 1 V, because the bipolar effect and the impact ionization would be suppressed. However, most of the previous studies on the floating body effects have been reported in the regime of 1.5-3 V. In this paper, we have investigated the floating body effects in 0.15 /spl mu/m PD MOSFETs below 1 V.
ISBN:9780780333154
0780333152
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.1996.552498