Analysis of high-power semiconductor laser amplifiers in pulsed regime

We present a dynamical beam propagation method for modelling pulse propagation in flared semiconductor laser amplifiers, including all the main effects involved such as diffraction, gain saturation, self-focusing, gain dispersion and refractive index dispersion up to the second order. We applied the...

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Bibliographic Details
Published inProceedings of 8th Mediterranean Electrotechnical Conference on Industrial Applications in Power Systems, Computer Science and Telecommunications (MELECON 96) Vol. 1; pp. 417 - 419 vol.1
Main Authors Perrone, G., Sartori, F., Balsamo, S., Montrosset, I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Diffraction
Dispersion
High power amplifiers
Laser beams
Laser modes
Optical propagation
Optical pulses
Pulse amplifiers
Semiconductor lasers
Semiconductor optical amplifiers
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Summary:We present a dynamical beam propagation method for modelling pulse propagation in flared semiconductor laser amplifiers, including all the main effects involved such as diffraction, gain saturation, self-focusing, gain dispersion and refractive index dispersion up to the second order. We applied the model to different devices in order to compare the performances of various guiding techniques and geometric shapes of the amplifiers. We obtain the result that linearly flared gain-guided devices give the best results with nearly-Gaussian output pulses, which should be more easily coupled to other optical devices.
ISBN:0780331095
9780780331099
DOI:10.1109/MELCON.1996.551569