Degradation of p-channel power VDMOSFETs under pulsed NBT stress

Results of pulsed NBT stress-induced threshold voltage instabilities in p-channel power VDMOSFETs are presented and compared with static NBTI results. Optimal frequency and duty cycle ranges for application of investigated devices are proposed as well.

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Bibliographic Details
Published in2010 27th International Conference on Microelectronics Proceedings pp. 443 - 446
Main Authors Djorić-Veljković, S, Danković, D, Prijić, A, Manić, I, Davidović, V, Golubović, S, Prijić, Z, Stojadinović, N
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Degradation
Frequency
MOSFETs
Niobium compounds
Pulse amplifiers
Pulse measurements
Signal generators
Stress
Threshold voltage
Titanium compounds
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Summary:Results of pulsed NBT stress-induced threshold voltage instabilities in p-channel power VDMOSFETs are presented and compared with static NBTI results. Optimal frequency and duty cycle ranges for application of investigated devices are proposed as well.
ISBN:1424472008
9781424472000
DOI:10.1109/MIEL.2010.5490448