Experimental analysis of two measurement techniques to characterize photodiode linearity

As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) subs...

Full description

Saved in:
Bibliographic Details
Published in2009 International Topical Meeting on Microwave Photonics pp. 1 - 4
Main Authors Ramaswamy, A., Nunoya, N., Piels, M., Johansson, L.A., Coldren, L.A., Bowers, J.E., Hastings, A.S., Williams, K.J., Klamkin, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2009
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes.
ISBN:1424447887
9781424447886