Experimental analysis of two measurement techniques to characterize photodiode linearity
As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) subs...
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Published in | 2009 International Topical Meeting on Microwave Photonics pp. 1 - 4 |
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Main Authors | , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2009
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Subjects | |
Online Access | Get full text |
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Summary: | As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes. |
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ISBN: | 1424447887 9781424447886 |