PIC modelling of plasma source ion implantation using metal ion sources

Summary form only given. Plasma source ion implantation (PSII) is a highly promising technique for improving the surface characteristics of materials. In low pressure gaseous discharges, the PSII process has resulted in enhancements in wear rate and hardness and in the reduction of the coefficient o...

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Published inInternational Conference on Plasma Science (papers in summary form only received) p. 264
Main Authors Faehl, R.J., Wood, B.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
Fault location
Ion implantation
Ion sources
Plasma density
Plasma immersion ion implantation
Plasma sheaths
Plasma simulation
Plasma sources
Polarization
Voltage
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Summary:Summary form only given. Plasma source ion implantation (PSII) is a highly promising technique for improving the surface characteristics of materials. In low pressure gaseous discharges, the PSII process has resulted in enhancements in wear rate and hardness and in the reduction of the coefficient of friction. The use of gas discharges restricts the number of types of ions to which the method can be applied. Greater flexibility will result if metal ion sources can be used to supply the plasma into which the implantation target is immersed. We have modeled metal ion PSII in a variety of configurations with an electromagnetic particle-in-cell (PIC) simulation code.
ISBN:0780326695
9780780326699
ISSN:0730-9244
2576-7208
DOI:10.1109/PLASMA.1995.533487