Modeling of simultaneous switching ground noise for BiCMOS drivers

A model of simultaneous switching ground noise for the BiCMOS driver is presented. Level I SPICE-type MOSFET and Gummel-Poon BJT device models are used for the analysis. Immunity of the quiet BiCMOS driver to noise present at the ground and power connections is also investigated.

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Bibliographic Details
Published inProceedings of Electrical Performance of Electronic Packaging pp. 33 - 36
Main Authors Seeker, D.A., Prince, J.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
BiCMOS integrated circuits
Circuit noise
Driver circuits
Electronics packaging
Integrated circuit noise
MOSFET circuits
Production
Semiconductor device noise
Switches
Threshold voltage
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Abstract A model of simultaneous switching ground noise for the BiCMOS driver is presented. Level I SPICE-type MOSFET and Gummel-Poon BJT device models are used for the analysis. Immunity of the quiet BiCMOS driver to noise present at the ground and power connections is also investigated.
AbstractList A model of simultaneous switching ground noise for the BiCMOS driver is presented. Level I SPICE-type MOSFET and Gummel-Poon BJT device models are used for the analysis. Immunity of the quiet BiCMOS driver to noise present at the ground and power connections is also investigated.
Author Prince, J.L.
Seeker, D.A.
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Snippet A model of simultaneous switching ground noise for the BiCMOS driver is presented. Level I SPICE-type MOSFET and Gummel-Poon BJT device models are used for the...
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StartPage 33
SubjectTerms BiCMOS integrated circuits
Circuit noise
Driver circuits
Electronics packaging
Integrated circuit noise
MOSFET circuits
Production
Semiconductor device noise
Switches
Threshold voltage
Title Modeling of simultaneous switching ground noise for BiCMOS drivers
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