Modeling of simultaneous switching ground noise for BiCMOS drivers
A model of simultaneous switching ground noise for the BiCMOS driver is presented. Level I SPICE-type MOSFET and Gummel-Poon BJT device models are used for the analysis. Immunity of the quiet BiCMOS driver to noise present at the ground and power connections is also investigated.
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Published in | Proceedings of Electrical Performance of Electronic Packaging pp. 33 - 36 |
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Main Authors | , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1995
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Subjects | |
Online Access | Get full text |
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Summary: | A model of simultaneous switching ground noise for the BiCMOS driver is presented. Level I SPICE-type MOSFET and Gummel-Poon BJT device models are used for the analysis. Immunity of the quiet BiCMOS driver to noise present at the ground and power connections is also investigated. |
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ISBN: | 078033034X 9780780330344 |
DOI: | 10.1109/EPEP.1995.524687 |