Experimental research on TF SOI CMOS ring oscillator with EM NMOSFET and AM PMOSFET assemblies at high temperature

• Published in: 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits pp. 447 - 450
• Main Authors: Haipeng Zhang, Lijian Ma, Tongli Wei, Yaolan Feng, Zhengfan Zhang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.07.2009
• Subjects: Assembly systems; CMOS technology; Frequency; Insulation; Inverters; MOSFET circuits; Polynomials; Ring oscillators; Temperature dependence; Threshold voltage
• ISBN: 1424439116; 9781424439119
• ISSN: 1946-1542; 1946-1550
• DOI: 10.1109/IPFA.2009.5232612

An SOI(silicon on insulator) CMOS RO(ring oscillator) with EM(enhanced mode) NMOSFET and AM(accumulative mode) PMOSFET assembly was studied at high temperatures. The temperature dependency of its frequency was deduced, experimentally measured and fitted with polynomial. It was proved that its frequency decrease faster below 473 K and is not less than 7.75 MHz even at 573 K. The temperature dependency of its logic swing was also experimentally measured and fitted with polynomial, which indicates that its logic swing slightly decreases approximately according to quadratic law as temperature increases from room temperature to 573 K and still lies in the correct logic margins even at high temperatures up to 573 K. Therefore it is still suitable for some high temperature applications.