Speed, power, and yield comparison of thin bonded SOI versus bulk CMOS technologies

As it becomes more difficult to increase MOSFET current drive through standard scaling techniques, other methods to improve performance are being pursued. One such technique is to use silicon-on-insulator (SOI) starting wafers. Performance enhancements using SOI have been demonstrated by a number of...

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Bibliographic Details
Published inProceedings. IEEE International SOI Conference pp. 41 - 42
Main Authors Nowak, E.D., Ding, L., Loh, Y.T., Hu, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1994
Subjects
CMOS technology
Delay effects
MOSFET circuits
Power supplies
Semiconductor films
Silicon on insulator technology
Testing
Vehicles
Voltage
Wafer bonding
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Summary:As it becomes more difficult to increase MOSFET current drive through standard scaling techniques, other methods to improve performance are being pursued. One such technique is to use silicon-on-insulator (SOI) starting wafers. Performance enhancements using SOI have been demonstrated by a number of authors. Most of the reported work has used SIMOX material. Bonded SOI material is an alternative to SIMOX, which potentially has lower material defect density. The purpose of this work was to compare bonded SOI performance and yield to that of bulk CMOS.
ISBN:9780780324060
0780324064
DOI:10.1109/SOI.1994.514225