An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions

• Published in: Proceedings of SOUTHEASTCON '96 pp. 432 - 435
• Main Authors: Yue, Y., Liou, J.J., Batarseh, I.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1996
• Subjects: Analytical models; Bipolar transistors; Charge carrier processes; Electron mobility; Equations; Insulated gate bipolar transistors; Insulation; Medical simulation; Predictive models; Threshold voltage

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-ca...