An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions

The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-ca...

Full description

Saved in:
Bibliographic Details
Published inProceedings of SOUTHEASTCON '96 pp. 432 - 435
Main Authors Yue, Y., Liou, J.J., Batarseh, I.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Analytical models
Bipolar transistors
Charge carrier processes
Electron mobility
Equations
Insulated gate bipolar transistors
Insulation
Medical simulation
Predictive models
Threshold voltage
Online AccessGet full text

Cover

More Information
Summary:The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model.
ISBN:9780780330887
0780330889
DOI:10.1109/SECON.1996.510106