An analytical model for the insulated-gate bipolar transistor under all free-carrier injection conditions
The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-ca...
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Published in | Proceedings of SOUTHEASTCON '96 pp. 432 - 435 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
1996
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Subjects | |
Online Access | Get full text |
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Summary: | The insulated-gate bipolar transistor (IGBT) is the most advanced and promising power switching device. This paper presents an analytical model for the current-voltage characteristics of such a device. The model is derived rigorously from the ambipolar transport equation and is valid for all free-carrier injection conditions, rather than just for a special case (i.e., low or high free-carrier injection) considered in the IGBT models reported to date in the literature. Results simulated from a two-dimensional device simulator called MEDICI are also included in support of the model. |
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ISBN: | 9780780330887 0780330889 |
DOI: | 10.1109/SECON.1996.510106 |