Characterization of CMOS IC photodiodes using focused laser sources

The static photoresponse of CMOS based integrated circuit (IC) photodiodes is presented. Typically, a standard CMOS n-well process can support n/sup +/-P/sub sub/, n/sub well/-P/sub sub/, and p/sup +/-n/sub well/ photodiode types. Each type of photodiode is characterized using one of four focused op...

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Bibliographic Details
Published inProceedings of SOUTHEASTCON '96 pp. 381 - 384
Main Authors Clarke, D.E., Perry, R., Arora, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Anodes
Cathodes
CMOS image sensors
CMOS integrated circuits
CMOS process
Doping
Educational institutions
Focusing
Optical sensors
Photodiodes
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Summary:The static photoresponse of CMOS based integrated circuit (IC) photodiodes is presented. Typically, a standard CMOS n-well process can support n/sup +/-P/sub sub/, n/sub well/-P/sub sub/, and p/sup +/-n/sub well/ photodiode types. Each type of photodiode is characterized using one of four focused optical sources including: 1 HeNe green (/spl lambda/=543 nm), 2 HeNe red (/spl lambda/=633 nm), laser diode red (/spl lambda/=670 mm), and 4 laser diode infrared (/spl lambda/=818 nm) lasers. In general, the responsivity of the photodiodes is comparable to commercially available devices, so they are ideally suited for low-cost low-power CMOS based optoelectronic circuits.
ISBN:9780780330887
0780330889
DOI:10.1109/SECON.1996.510094