Study on resistivity stability of NTDFZSi at high temperature

The resistivity stability of FZSi at high temperature has been studied by the method of isothermal annealing, X-ray transmission topography, spread resistance (SR), etc. The effect of microdefects on the resistivity stability at high temperature was studied primarily.

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Bibliographic Details
Published inProceedings of 4th International Conference on Solid-State and IC Technology pp. 574 - 576
Main Authors Yangxian Li, Yulin Ju, Junzhong Cao, Hongmei Wang, Desheng Cui
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
Annealing
Conductivity
Electronics industry
Impurities
Isothermal processes
Lattices
Silicon
Stability
Surfaces
Temperature
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Summary:The resistivity stability of FZSi at high temperature has been studied by the method of isothermal annealing, X-ray transmission topography, spread resistance (SR), etc. The effect of microdefects on the resistivity stability at high temperature was studied primarily.
ISBN:9780780330627
0780330625
DOI:10.1109/ICSICT.1995.503355