Gate oxide conductivity of polysilicon thin film transistors

• Published in: Proceedings of International Conference on Microelectronics Vol. 1; pp. 149 - 152 vol.1
• Main Authors: Gueorguiev, V.K., Ivanov, T.E., Popova, L.I., Andreev, S.K.
• Format: Conference Proceeding
• Language: English
• Published: IEEE Electron Devices Society 1995
• Subjects: Annealing; Boron; Conductivity; Grain boundaries; Hydrogen; Ion implantation; Silicon; Thin film transistors; Tunneling; Voltage

Conductivity investigations of thin film oxides grown on polysilicon are presented. It is shown that hydrogenation of underlined polysilicon with ion implantation of hydrogen through gate oxide layers essentially influence the oxides conductivity. In comparison with nonimplanted oxides, a few volts...