Gate oxide conductivity of polysilicon thin film transistors

Conductivity investigations of thin film oxides grown on polysilicon are presented. It is shown that hydrogenation of underlined polysilicon with ion implantation of hydrogen through gate oxide layers essentially influence the oxides conductivity. In comparison with nonimplanted oxides, a few volts...

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Bibliographic Details
Published inProceedings of International Conference on Microelectronics Vol. 1; pp. 149 - 152 vol.1
Main Authors Gueorguiev, V.K., Ivanov, T.E., Popova, L.I., Andreev, S.K.
Format Conference Proceeding
LanguageEnglish
Published IEEE Electron Devices Society 1995
Subjects
Annealing
Boron
Conductivity
Grain boundaries
Hydrogen
Ion implantation
Silicon
Thin film transistors
Tunneling
Voltage
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Summary:Conductivity investigations of thin film oxides grown on polysilicon are presented. It is shown that hydrogenation of underlined polysilicon with ion implantation of hydrogen through gate oxide layers essentially influence the oxides conductivity. In comparison with nonimplanted oxides, a few volts higher gate voltages for increased current injection and for higher Fowler-Nordheim effective tunneling barriers are obtained.
ISBN:9780780327863
0780327861
DOI:10.1109/ICMEL.1995.500854