Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy

• Published in: Proceedings of International Electron Devices Meeting pp. 751 - 754
• Main Authors: King, C.A., Johnson, R.W., Chen, Y.K., Chiu, T.-Y., Cirelli, R.A., Chin, G.M., Frei, M.R., Kornblit, A., Schwartz, G.P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1995
• Subjects: Capacitance-voltage characteristics; Doping; Epitaxial growth; Frequency; Germanium alloys; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Scattering parameters; Silicon germanium

We report a new Si/SiGe HBT device structure using selective and non-selective rapid thermal epitaxy. The structure has the potential to simultaneously provide for high level integration and a high Ge fraction strained alloy base which allows high base doping. We used an in-situ As doped polysilicon...