Integratable and low base resistance Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors using selective and non-selective rapid thermal epitaxy

• Published in: Proceedings of International Electron Devices Meeting pp. 751 - 754
• Main Authors: King, C.A., Johnson, R.W., Chen, Y.K., Chiu, T.-Y., Cirelli, R.A., Chin, G.M., Frei, M.R., Kornblit, A., Schwartz, G.P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 1995
• Subjects: Capacitance-voltage characteristics; Doping; Epitaxial growth; Frequency; Germanium alloys; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Scattering parameters; Silicon germanium
• ISBN: 0780327004; 9780780327009
• ISSN: 0163-1918; 2156-017X
• DOI: 10.1109/IEDM.1995.499327

We report a new Si/SiGe HBT device structure using selective and non-selective rapid thermal epitaxy. The structure has the potential to simultaneously provide for high level integration and a high Ge fraction strained alloy base which allows high base doping. We used an in-situ As doped polysilicon emitter contact to provide low R/sub E/ (9 to 12 /spl Omega/ for A/sub E/=0.5/spl times/10 /spl mu/m/sup 2/) without the enhanced diffusion effects associated with direct implantation or phosphorous doped poly emitters. In addition, we studied the effects of the extrinsic base implant position on the device I-V characteristics, junction capacitances, and high frequency performance. The collector current increased by over 3 decades as the extrinsic base implant position moved from the single crystal region to an adjacent poly region due to the containment of damage. S-parameter measurements of a 0.5/spl times/10 /spl mu/m/sup 2/ device yielded a cutoff frequency of 54 GHz for V/sub CE/=1.5 V and I/sub C/=14.8 mA.