Luminescence properties of defects in P/sup +/- or B/sup +/-implanted thermally grown silicon dioxide

In this paper, we report photoluminescence spectra from P/sup +/- or B/sup +/-implanted thermally grown SiO/sub 2/ films obtained by synchrotron radiation and an excimer laser, and discuss the nature of the defects induced by the ion implantation.

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Bibliographic Details
Published inProceedings of 1995 International Symposium on Electrical Insulating Materials pp. 85 - 88
Main Authors Seol, K.S., Ieki, A., Ohki, Y., Nishikawa, H., Takiyama, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
Acceleration
Equations
Impurities
Kinetic theory
Laser excitation
Luminescence
Silicon
Synchrotron radiation
Temperature measurement
Wavelength measurement
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Summary:In this paper, we report photoluminescence spectra from P/sup +/- or B/sup +/-implanted thermally grown SiO/sub 2/ films obtained by synchrotron radiation and an excimer laser, and discuss the nature of the defects induced by the ion implantation.
ISBN:4886860478
9784886860477
DOI:10.1109/ISEIM.1995.496514