In/sub x/Ga/sub 1-x/Sb of highly uniform composition

This paper reports on In/sub x/Ga/sub 1-x/Sb (x=0.20) bulk crystals of uniform composition obtained by rapid, direct synthesis from the elements. The uniformity of the composition has been checked out by Neutron Activation Analysis (NAA). Hall effect and specific resistance measurements have been pe...

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Bibliographic Details
Published in1995 International Semiconductor Conference. CAS '95 Proceedings pp. 297 - 300
Main Authors Manea, A.S., Munteanu, I., Losofatu, M., Lazarescu, M.F., Cruceru, M., Grigorescu, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1995
Subjects
Composite materials
Crystalline materials
Crystallization
Epitaxial growth
Isotopes
Neutrons
Semiconductor materials
Semiconductor thin films
Substrates
Temperature
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Summary:This paper reports on In/sub x/Ga/sub 1-x/Sb (x=0.20) bulk crystals of uniform composition obtained by rapid, direct synthesis from the elements. The uniformity of the composition has been checked out by Neutron Activation Analysis (NAA). Hall effect and specific resistance measurements have been performed within the temperature range of 77 K-310 K. For all the investigated samples p-type conductivity results.
ISBN:9780780326477
0780326474
DOI:10.1109/SMICND.1995.494920