15 /spl mu/m solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8 /spl mu/m CMOS for 1 Gb/s two-beam smart-pixel receiver/transmitter

A two-beam optical repeater circuit operates to 1 Gb/s, consumes 10 mW, occupies about 1100 /spl mu/m/sup 2/, and is realized with a technology capable of providing thousands of optical inputs and outputs to foundry-grade VLSI silicon CMOS circuitry. The technology provides this capability by attach...

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Bibliographic Details
Published in1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC pp. 406 - 407
Main Authors Woodward, T.K., Krishnamoorthy, A.V., Goossen, K.W., Walker, J.A., Lentine, A.L., Novotny, R.A., D'Asaro, L.A., Chirovsky, L.M.F., Hui, S.P., Tseng, B., Kossives, D., Dahringer, D., Leibenguth, R.E., Cunningham, J.E., Jan, W.Y., Miller, D.A.B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1996
Subjects
Bonding
Circuits
CMOS technology
Gallium arsenide
Joining processes
Optical modulation
Quantum well devices
Repeaters
Silicon
Very large scale integration
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Summary:A two-beam optical repeater circuit operates to 1 Gb/s, consumes 10 mW, occupies about 1100 /spl mu/m/sup 2/, and is realized with a technology capable of providing thousands of optical inputs and outputs to foundry-grade VLSI silicon CMOS circuitry. The technology provides this capability by attaching GaAs/AlGaAs multiple-quantum-well (MQW) modulators and detectors to VLSI CMOS with flip-chip solder bonding. The main unique features are summarized.
ISBN:9780780331365
0780331362
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.1996.488737