A comprehensive and comparative study of interface and bulk characteristics of nMOSETs with la-incorporated high-k dielectrics

Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (T inv~ 1.2 nm). Digital and analog performances as well as reliability characteristics are compared in detail. It is shown that HfLaSiON h...

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Bibliographic Details
Published in2008 IEEE International Electron Devices Meeting pp. 1 - 4
Main Authors Won-Ho Choi, Hyuk-Min Kwon, In-Shik Han, Tae-Gyu Goo, Min-Ki Na, Chang Yong Kang, Gennadi Bersuker, Byoung Hun Lee, Yoon-Ha Jeong, Hi-Deok Lee, Jammy, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2008
Subjects
1f noise
Annealing
Degradation
Dielectric devices
Dielectric substrates
Hafnium oxide
High K dielectric materials
High-K gate dielectrics
Jamming
MOSFETs
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Summary:Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (T inv~ 1.2 nm). Digital and analog performances as well as reliability characteristics are compared in detail. It is shown that HfLaSiON has a strong relationship with the interface characteristics due to low barrier height, while HfLaON with the bulk trap characteristics due to greater bulk trap density.
ISBN:9781424423774
1424423775
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2008.4796627