Development of an N-type DEMOS on a 0.6-µm platform for 18V analog & digital aplications

Anomalous hot-carrier induced on-resistance (Ron) and drive current degradations were observed in 18 V n-type Drain Extended MOS (DEMOS) devices with various n-type Drain Drift (NDD) implant dosages. Under the same stress conditions, the device with higher NDD dosage while showing a higher substrate...

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Bibliographic Details
Published in2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel pp. 775 - 778
Main Authors Mayzels, Y., Levin, S., Regev, S., Khmaisy, H., Drori, R., Shapira, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2008
Subjects
CMOS process
Computational modeling
Computer simulation
Degradation
Drain-Extended MOS (DEMOS)
Energy states
Hot carriers
hot-carrier (HC)
Implants
Medium voltage
n-type drain-drift (NDD)
ON-resistance (Ron)
Stress
TCAD
Threshold voltage
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Summary:Anomalous hot-carrier induced on-resistance (Ron) and drive current degradations were observed in 18 V n-type Drain Extended MOS (DEMOS) devices with various n-type Drain Drift (NDD) implant dosages. Under the same stress conditions, the device with higher NDD dosage while showing a higher substrate current (Isub) results in lower Idsat and ON-resistance (Ron) degradations. Optimal conditions for NDD implant which shift the high electric field peak causing away from the surface were introduced using technology computer aided design (TCAD) simulations. Consequently hot carrier induced degradation was suppressed as was verified by silicon measurements.
ISBN:142442481X
9781424424818
DOI:10.1109/EEEI.2008.4736641