Mode locking of optically pumped long wavelength InP-Based semiconductor disk lasers with GaInNAs saturable absorber

We have used a two quantum-well GaInNAs semiconductor saturable absorber mirror (SESAM) with a high power InP-based semiconductor disk laser to obtain a 2 GHz mode locked OP-VECSEL laser with a pulse width <20 ps.

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Bibliographic Details
Published in2008 20th International Conference on Indium Phosphide and Related Materials pp. 1 - 3
Main Authors Khadour, A., Bouchoule, S., Aubin, G., Tourrenc, J.P., Miard, A., Harmand, J.C., Decobert, J., Oudar, J.L.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
external cavity
Laser excitation
Laser mode locking
Mirrors
Optical pulses
Optical pumping
Passive mode-locking
Power lasers
Pump lasers
Quantum well lasers
semiconductor laser
Semiconductor lasers
SEmiconductor Saturable Absorber Mirror (SESAM)
Space vector pulse width modulation
Vertical-External-Cavity Surface-Emitting Laser (VECSEL)
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Summary:We have used a two quantum-well GaInNAs semiconductor saturable absorber mirror (SESAM) with a high power InP-based semiconductor disk laser to obtain a 2 GHz mode locked OP-VECSEL laser with a pulse width <20 ps.
ISBN:9781424422586
1424422582
ISSN:1092-8669
DOI:10.1109/ICIPRM.2008.4703021