The research of the static silicon avalanche diode's characteristics in super wide noise generator mode

Static characteristics of silicon double drift avalanche diode in noise generator mode in 3-mm waveband range with ENR level more than 55 dB in more than 20 % frequency band with plusmn1.5 dB irregularity research was held. The presence of differential negative resistance in static characteristics w...

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Bibliographic Details
Published in2008 18th International Crimean Conference - Microwave & Telecommunication Technology pp. 103 - 104
Main Authors Loshitskyi, P. P., Pavlyuchenko, A. V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
Character generation
Diodes
Frequency
Helium
Noise generators
Noise level
Silicon
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Summary:Static characteristics of silicon double drift avalanche diode in noise generator mode in 3-mm waveband range with ENR level more than 55 dB in more than 20 % frequency band with plusmn1.5 dB irregularity research was held. The presence of differential negative resistance in static characteristics which provide low-frequency noise in microwave band transferring was shown due the research.
ISBN:9789663351667
9663351667
DOI:10.1109/CRMICO.2008.4676307