A 0.24 μm SiGe BiCMOS technology featuring 6.5V CMOS, fT/fMAX of 15/14 GHz VPNP, and fT/fMAX of 60/125 GHz HBT

For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5 V CMOS capability...

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Bibliographic Details
Published in2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting pp. 97 - 100
Main Authors Candra, P., Dahlstrom, M., Zierak, M., Voegeli, B., Watson, K., Gray, P., He, Z.X., Rassel, R.M., Von Bruns, S., Schmidt, N., Camillo-Castillo, R., Previty-Kelly, R., Gautsch, M., Norris, A., Gordon, M., Chapman, P., Hershberger, D., Lukaitis, J., Feilchenfeld, N., Joseph, A., St. Onge, S.A., Dunn, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
BiCMOS integrated circuits
CMOS integrated circuits
CMOS technology
FETs
Implants
Performance evaluation
Silicon germanium
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Summary:For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particular, this technology provides 6.5 V CMOS capability and VPNP with f T /f MAX of 15/14 GHz and BV CEO of 6.5 V which can be used to complement high breakdown NPN with f T of 30 GHz and BVceo of 6.0 V.
ISBN:1424427258
9781424427253
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2008.4662721