ISPSD '07 Charitat Award; Split-Gate Resurf Stepped Oxide (RSO) MOSFETS for 25V Applications with Record Low Gate-to-Drain Charge

• Published in: 2008 20th International Symposium on Power Semiconductor Devices and IC's p. 1
• Main Authors: Goarin, P., Koops, G. E. J., van Dalen, R., LeCam, C., Saby, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2008
• Subjects: MOSFET
• ISBN: 9781424415328; 1424415322
• ISSN: 1063-6854; 1946-0201
• DOI: 10.1109/ISPSD.2008.4538879

This paper presents a split-gate version of the Resurf Stepped Oxide (RSO) MOSFET. Splitting the gate enables a drastic reduction of the gate-to-drain capacitance intrinsic to the RSO device concept while keeping all the benefits of the RESURF effect. We achieved a record on-resistance of 3.8 mΩmm 2 and gate-to-drain charge of 0.9 nCmm2 at a breakdown voltage of 35V for a pitch of 1.3 mm (0.8 mm trench width). The switching losses of our split-gate RSO MOSFET are 4 times better than the best published data in the same voltage range.