A12O3 optimization for Charge Trap memory application

Aim of this work is the study the crystallization treatment of Alumina used as blocking oxide in Charge Trap memories. We have found that thermal treatment before gate deposition is able to crystallize Alumina giving better erase and write efficiency than any treatment after gate deposition, without...

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Bibliographic Details
Published in2008 9th European Workshop on Ultimate Integration on Silicon pp. 191 - 194
Main Authors Scozzari, C., Albini, G., Alessandri, M., Amoroso, S., Bacciaglia, P., Del Vitto, A., Ghidini, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.03.2008
Subjects
Aluminum oxide
Annealing
Capacitance-voltage characteristics
Capacitors
Crystallization
Current measurement
Dielectric measurements
Interface states
Temperature
Thermal conductivity
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ISBN1424417295
9781424417292
DOI10.1109/ULIS.2008.4527171

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Summary:Aim of this work is the study the crystallization treatment of Alumina used as blocking oxide in Charge Trap memories. We have found that thermal treatment before gate deposition is able to crystallize Alumina giving better erase and write efficiency than any treatment after gate deposition, without degradation of the memory stack.
ISBN:1424417295
9781424417292
DOI:10.1109/ULIS.2008.4527171