Fine-Line High-Speed Excimer Laser Lithography

The drive toward finer geometries in large scale microelectronic device fabrication has motivated the extensive research witnessed in recent years in optical, e-beam, X-ray and ion-beam lithography. Of these, the most economical, and therefore dominant, technology for pattern delineation continues t...

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Bibliographic Details
Published in1982 Symposium on VLSI Technology. Digest of Technical Papers pp. 92 - 93
Main Authors Jain, K., Willson, C. G., Lin, B. J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1982
Subjects
Laser beams
Laser excitation
Laser modes
Laser transitions
Lithography
Optical pulses
Power lasers
Resists
Spatial coherence
Speckle
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Summary:The drive toward finer geometries in large scale microelectronic device fabrication has motivated the extensive research witnessed in recent years in optical, e-beam, X-ray and ion-beam lithography. Of these, the most economical, and therefore dominant, technology for pattern delineation continues to be optical lithography. Higher resolution and other well-known advantages of using shorter exposure wavelengths for both proximity and projection printing have promoted wide interest in deep UV lithography. However, practical utility of deep UV exposure tools has been severely limited by the low power output of the Xe-Hg or deuterium light source they commonly employ. Efforts aimed at enhancing the deep UV brightness of these sources have not been successful due to problems associated with removal of the heat generated by the unwanted long-wavelength radiation.