Effect of ion-irradiation induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide

We found that the initial presence of defects induced by ion-irradiation reduces the fraction of Er ions that can be excited via nanocluster silicon (nc-Si) even after their removal via high-temperature annealing.

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Bibliographic Details
Published in2007 4th IEEE International Conference on Group IV Photonics pp. 1 - 3
Main Authors Hoon Jeong, Se-young Seo, Shin, J.H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2007
Subjects
Amorphous materials
Annealing
Atomic layer deposition
Erbium
Luminescence
Optical films
Optical sensors
Particle beam optics
Semiconductor films
Silicon
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Summary:We found that the initial presence of defects induced by ion-irradiation reduces the fraction of Er ions that can be excited via nanocluster silicon (nc-Si) even after their removal via high-temperature annealing.
ISBN:9781424409341
1424409349
ISSN:1949-2081
1949-209X
DOI:10.1109/GROUP4.2007.4347675