Investigation of Substrate Noise Coupling and Isolation Characteristics for a 0.35μM HV CMOS Technology

This paper presents the characterization of substrate noise coupling and the isolation capability of ohmic substrate contacts in a HV CMOS technology. Layout variations of contact sizes, distances, and several p+ guard structures are subject of this research. Metal shielded DUT fixtures have been de...

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Bibliographic Details
Published inProceedings of the 14th International Conference, Mixed Design of Integrated Circuits and Systems : MIXDES 2007 : Ciechocinek, Poland, 21-23 June, 2007 pp. 429 - 432
Main Authors Pflanzl, W.C., Seebacher, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
CMOS technology
Crosstalk
Damping
Electrical resistance measurement
Fixtures
guard ring
HV CMOS
Isolation
Isolation technology
Radio frequency
Resistors
Semiconductor device modeling
Substrate coupling
Testing
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ISBN9788392263241
8392263243
DOI10.1109/MIXDES.2007.4286198

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Summary:This paper presents the characterization of substrate noise coupling and the isolation capability of ohmic substrate contacts in a HV CMOS technology. Layout variations of contact sizes, distances, and several p+ guard structures are subject of this research. Metal shielded DUT fixtures have been developed to improve the reliability and accuracy of the measurements. All test cases are fabricated with a 0.35μm HV CMOS technology (Vmax <= 120 V). This process features high resistive native substrate (20 Ohm.cm) together with a 0.5 Ohm.cm pwell. The modeling section describes the distributed substrate "resistor" and the DUT fixture behavior.
ISBN:9788392263241
8392263243
DOI:10.1109/MIXDES.2007.4286198