Sputtered A1N Thin Films for Piezoelectric MEMS Devices

Piezoelectric films have been demonstrated to be attractive for micromechanical systems (MEMS) devices. Among the piezoelectric films used, AlN film has been less explored. In this study, AlN resonators and accelerometers, utilizing longitudinal and transverse piezoelectric effects respectively, wer...

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Bibliographic Details
Published in2006 5th IEEE Conference on Sensors pp. 10 - 13
Main Authors Wang, Li-Peng, Ginsburg, Eyal, Gerfers, Friedel, Samara-Rubio, Dean, Weinfeld, Boaz, Ma, Qing, Rao, Valluri, He, Ming Yuan
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2006
Subjects
Accelerometers
Material properties
Microelectromechanical devices
Micromechanical devices
Piezoelectric devices
Piezoelectric effect
Piezoelectric films
Sputtering
Testing
Thin film devices
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Summary:Piezoelectric films have been demonstrated to be attractive for micromechanical systems (MEMS) devices. Among the piezoelectric films used, AlN film has been less explored. In this study, AlN resonators and accelerometers, utilizing longitudinal and transverse piezoelectric effects respectively, were demonstrated. Resonators with Q of 1000 and electromechanical coupling (k t 2 ) of 6.5% were achieved at ~2 GHz. Accelerometers were fabricated and tested with charge sensitivities ranging between 0.06 to 0.45 pC/g depending on device designs. Important material properties of sputtered AlN films - C 33 of 435 GPa, e 33 of 1.55 C/m 2 , and e 31 of -0.58 C/m 2 - were extracted by fitting finite element analysis (FEA) simulated values to measured results.
ISBN:1424403758
9781424403752
ISSN:1930-0395
2168-9229
DOI:10.1109/ICSENS.2007.355705