Microwave noise of hot electrons in AlxGal-xAs channel. Procedure for measuring AlGaAs lattice heating

Hot electron noise temperatures using a pulsed measurement technique as finction of electric field in the frequency range 5OMHz-4GHz are presented in Si doped AIxGaIxAs alloy with 0.15, 0.2, 0.25 and 0.3 aluminium contents x. Diffusion coefficients D(E) are deduced. A method to detect self heating e...

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Bibliographic Details
Published in1994 24th European Microwave Conference Vol. 1; pp. 770 - 775
Main Authors de Murcia, M., Richard, E., Benvenuti, A., Vanbremeersch, J., Zimmermann, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1994
Subjects
Aluminum alloys
Automatic testing
Electromagnetic heating
Electrons
Frequency
Lattices
Measurement techniques
Pulse measurements
Silicon alloys
Temperature distribution
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Summary:Hot electron noise temperatures using a pulsed measurement technique as finction of electric field in the frequency range 5OMHz-4GHz are presented in Si doped AIxGaIxAs alloy with 0.15, 0.2, 0.25 and 0.3 aluminium contents x. Diffusion coefficients D(E) are deduced. A method to detect self heating effects of devices under test has been developed.
DOI:10.1109/EUMA.1994.337304