APA (7th ed.) Citation

Garone, P., Venkataraman, V., & Sturm, J. (1990). Carrier confinement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures. Technical digest - International Electron Devices Meeting, 383-386. https://doi.org/10.1109/IEDM.1990.237151

Chicago Style (17th ed.) Citation

Garone, P.M, V. Venkataraman, and J.C Sturm. "Carrier Confinement in MOS-gated Ge/sub X/Si/sub 1-x//Si Heterostructures." Technical Digest - International Electron Devices Meeting 1990: 383-386. https://doi.org/10.1109/IEDM.1990.237151.

MLA (9th ed.) Citation

Garone, P.M, et al. "Carrier Confinement in MOS-gated Ge/sub X/Si/sub 1-x//Si Heterostructures." Technical Digest - International Electron Devices Meeting, 1990, pp. 383-386, https://doi.org/10.1109/IEDM.1990.237151.