Strain and vertical scaling in the base of Al/sub 0.48/In/sub 0.52/As/In/sub x/Ga/sub 1-x/As heterostructure bipolar transistors

The authors present two experimental results which are of direct consequence in the design of high-performance n-p-n AlInAs/InGaAs heterostructure bipolar transistors (HBTs). First, it is shown that the effective heterostructure valence band offset is independent of composition and strain for pseudo...

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Published inLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels pp. 418 - 419
Main Authors Jalali, B., Levi, A.F.J., Chuang, S.L., Smith, P.R., Humphrey, D.A., Nottenburg, R.N., Sivco, D., Cho, A.Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1992
Subjects
Bipolar transistors
Capacitive sensors
Chemicals
Current measurement
Heterojunction bipolar transistors
Indium gallium arsenide
Indium phosphide
Molecular beam epitaxial growth
Photonic band gap
Temperature measurement
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Summary:The authors present two experimental results which are of direct consequence in the design of high-performance n-p-n AlInAs/InGaAs heterostructure bipolar transistors (HBTs). First, it is shown that the effective heterostructure valence band offset is independent of composition and strain for pseudomorphic base In/sub x/Ga/sub 1-x/As HBTs in the range 0.5<x<0.6. Second, the effect of vertical scaling on the static and dynamic transistor behavior is demonstrated. For base thickness, X/sub B/<1000 AA, the injected electrons maintain a nonequilibrium distribution throughout the base resulting in unconventional 1/X/sub B/ scaling of the common emitter current gain, enhancement of avalanche multiplication in the collector, and negligible base delay time.< >
ISBN:0780305221
9780780305229
DOI:10.1109/ICIPRM.1992.235575