Reliability imposed constraints on current density of high performance poly-emitter bipolar transistors

The hot carrier induced degradation of self-aligned poly-emitter bipolar transistors under forward active stress at elevated temperatures is investigated. Low current and high current beta instability is determined to be an emitter perimeter effect. Since most of the high-performance ECL (emitter co...

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Bibliographic Details
Published inProceedings on Bipolar Circuits and Technology Meeting pp. 180 - 183
Main Author Joshi, S.P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 1990
Subjects
Bipolar transistors
Circuit stability
Coupling circuits
Current density
Degradation
Hot carriers
Logic circuits
Predictive models
Stress
Temperature
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Summary:The hot carrier induced degradation of self-aligned poly-emitter bipolar transistors under forward active stress at elevated temperatures is investigated. Low current and high current beta instability is determined to be an emitter perimeter effect. Since most of the high-performance ECL (emitter coupled logic) circuits operate at high current levels, a predictive/quantitative model is developed to determine the stability and reliability of self-aligned bipolar transistors in the high-current regime.< >
DOI:10.1109/BIPOL.1990.171157